STB70NH03LT4
MOSFET N-CH 30V 60A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ III series N-Channel Power MOSFET, part number STB70NH03LT4, is designed for high-efficiency power switching applications. This device features a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 60A at 25°C (Tc), with a maximum power dissipation of 858W (Tc). The STB70NH03LT4 exhibits a low on-resistance of 9.5mOhm at 30A and 10V (Vgs). Key parameters include a gate charge (Qg) of 21nC (max) at 5V (Vgs) and input capacitance (Ciss) of 2200pF (max) at 10V (Vds). It utilizes surface mount technology, housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package for thermal management. This component is suitable for automotive, industrial, and high-power computing applications. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 858W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 10 V |
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