STB70NFS03LT4
MOSFET N-CH 30V 70A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STB70NFS03LT4 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 70A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The low on-resistance of 9.5mOhm at 35A and 10V gate drive ensures minimal conduction losses. Key parameters include a gate charge of 30 nC at 5V and input capacitance of 1440 pF at 25V. The STB70NFS03LT4 utilizes a surface mount D2PAK (TO-263-3) package, suitable for automated assembly. Operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive, industrial power supplies, and high-current switching circuits.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±18V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 25 V |
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