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STB70NF3LLT4

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STB70NF3LLT4

MOSFET N-CH 30V 70A D2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STB70NF3LLT4 is an N-Channel STripFET™ II Power MOSFET with a 30V drain-source voltage. This device features a low on-resistance of 9.5mOhm maximum at 35A and 10V Vgs, with a continuous drain current capability of 70A at 25°C. It offers a maximum power dissipation of 100W at 25°C. The STB70NF3LLT4 is supplied in a TO-263-3, D2PAK surface mount package, suitable for demanding applications. Key electrical parameters include input capacitance of 1650pF maximum and gate charge of 33nC maximum at 4.5V Vgs. This component is designed for operation across a wide temperature range of -55°C to 175°C. Applications include automotive, industrial power supplies, and motor control systems.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs9.5mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageD2PAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1650 pF @ 25 V

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