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STB70NF03L-1

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STB70NF03L-1

MOSFET N-CH 30V 70A I2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ II series N-Channel Power MOSFET, part number STB70NF03L-1. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 70A at 25°C (Tc). The STB70NF03L-1 offers a low on-resistance of 9.5mOhm maximum at 35A and 10V Vgs. Designed for efficient power handling, it dissipates up to 100W (Tc) and is housed in a TO-262 (I2PAK) package suitable for through-hole mounting. Key electrical characteristics include a gate charge of 30nC maximum at 5V Vgs and input capacitance of 1440pF maximum at 25V Vds. Operating temperature range is -55°C to 175°C (TJ). This component finds application in power switching and motor control systems across various industrial sectors.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs9.5mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)100W (Tc)
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device PackageTO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±18V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs30 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1440 pF @ 25 V

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