STB70N10F4
MOSFET N-CH 100V 65A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB70N10F4 is a 100V N-Channel Power MOSFET from the DeepGATE™ and STripFET™ series, available in a TO-263 (D2PAK) surface mount package. This device offers a continuous drain current of 65A (Tc) with a maximum power dissipation of 150W (Tc). The Rds(On) is specified at a maximum of 19.5mOhm at 30A and 10V gate drive. Key parameters include a gate charge (Qg) of 85 nC (max) at 10V and input capacitance (Ciss) of 5800 pF (max) at 25V. The operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: DeepGATE™, STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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