STB6NM60N
MOSFET N-CH 600V 4.6A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB6NM60N is an N-Channel Power MOSFET from the MDmesh™ II series, designed for high-efficiency switching applications. This component features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4.6A at 25°C (Tc). The device offers a typical on-resistance (Rds On) of 920mOhm at 2.3A and 10V Vgs, with a maximum power dissipation of 45W (Tc). Key parameters include a gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 420 pF at 50V. The STB6NM60N is provided in a TO-263-3, D2PAK surface mount package, suitable for applications in power supplies, lighting, and industrial motor control. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 920mOhm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 50 V |
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