STB6NK60ZT4
MOSFET N-CH 600V 6A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH™ STB6NK60ZT4. This N-Channel Power MOSFET offers a 600V drain-source voltage and 6A continuous drain current at 25°C (Tc). Featuring a low on-resistance of 1.2 Ohm maximum at 3A, 10V, this device is designed for efficient power switching applications. The STB6NK60ZT4 boasts a maximum power dissipation of 110W (Tc) and a gate charge of 46nC at 10V. Key parameters include an input capacitance (Ciss) of 905pF at 25V and a gate-source threshold voltage (Vgs(th)) of 4.5V maximum at 100µA. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. This component is suitable for use in power supply units, lighting, and motor control applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 25 V |
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