STB6NK60Z-1
MOSFET N-CH 600V 6A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics SuperMESH™ N-Channel Power MOSFET, part number STB6NK60Z-1, offers a 600V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C. This device features a low on-resistance of 1.2 Ohm maximum at 3A and 10V Vgs, with a typical gate charge of 46nC. The input capacitance (Ciss) is 905pF maximum at 25V. Designed for high-efficiency power switching applications, the STB6NK60Z-1 is packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting. Its maximum power dissipation is 110W at 25°C case temperature. This component is suitable for use in power supplies, lighting, and motor control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 25 V |
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