STB6N65M2
MOSFET N-CH 650V 4A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB6N65M2 is a 650V N-Channel Power MOSFET from the MDmesh™ series, packaged in a TO-263 (D2PAK) surface-mount configuration. This device offers a continuous drain current of 4A at 25°C (Tc) and a maximum power dissipation of 60W (Tc). Key electrical characteristics include a drain-to-source breakdown voltage (Vdss) of 650V, a maximum Rds(on) of 1.35 Ohm at 2A, 10V, and an input capacitance (Ciss) of 226pF at 100V. The gate threshold voltage (Vgs(th)) is 4V at 250µA, with a maximum gate-source voltage (Vgs) of ±25V. This component is suitable for applications in power factor correction, switch mode power supplies, and general-purpose high voltage switching. The device is supplied on tape and reel (TR).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 226 pF @ 100 V |
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