STB6N62K3
MOSFET N-CH 620V 5.5A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB6N62K3 is an N-Channel SuperMESH3™ Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 620V and a continuous drain current (Id) of 5.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.2 Ohms at 2.8A and 10V gate-source voltage, it offers efficient power handling. The device dissipates up to 90W (Tc) and is available in a TO-263-3, D2PAK surface mount package. Key electrical characteristics include a gate charge (Qg) of 34 nC (Max) @ 10V and input capacitance (Ciss) of 875 pF (Max) @ 50V. This MOSFET is suitable for use in power factor correction, switch mode power supplies, and lighting applications. It operates at junction temperatures up to 150°C.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 50 V |
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