STB60NH02LT4
MOSFET N-CH 24V 60A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ III series N-Channel Power MOSFET, part number STB60NH02LT4, features a 24V drain-source voltage (Vdss) and a continuous drain current (Id) of 60A at 25°C (Tc). This surface-mount device is housed in a TO-263-3, D2PAK package, offering a low on-resistance of 10.5mOhm at 30A and 10V (Vgs). With a maximum power dissipation of 70W (Tc) and a gate charge (Qg) of 32 nC at 10V, this MOSFET is suitable for demanding applications in automotive and industrial power management. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 15 V |
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