STB60NF10T4
MOSFET N-CH 100V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB60NF10T4 is an N-Channel STripFET™ II Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 80A at 25°C (Tc). With a maximum on-resistance (Rds On) of 23mOhm at 40A and 10V gate-source voltage, it offers efficient power handling. The STB60NF10T4 dissipates up to 300W (Tc) and is housed in a TO-263-3, D2PAK surface-mount package, suitable for automated assembly. Key electrical parameters include a gate charge (Qg) of 104 nC (max) at 10V and input capacitance (Ciss) of 4270 pF (max) at 25V. This MOSFET is utilized in industries such as automotive, industrial power control, and high-power switching supplies.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 25 V |
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