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STB60NF10-1

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STB60NF10-1

MOSFET N-CH 100V 80A I2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STB60NF10-1 is a N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 80 A at 25°C (Tc). The Rds(on) is specified at a maximum of 23 mOhm at 40 A and 10 V gate drive. With a maximum power dissipation of 300 W (Tc), this MOSFET is suitable for demanding industrial and automotive power management systems. Key electrical characteristics include an input capacitance (Ciss) of 4270 pF at 25 V and a gate charge (Qg) of 104 nC at 10 V. The STB60NF10-1 is housed in an I2PAK (TO-262-3 Long Leads) package, facilitating through-hole mounting. It operates across a wide temperature range of -55°C to 175°C (TJ).

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs23mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageI2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4270 pF @ 25 V

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