STB60NF10-1
MOSFET N-CH 100V 80A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB60NF10-1 is a N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 80 A at 25°C (Tc). The Rds(on) is specified at a maximum of 23 mOhm at 40 A and 10 V gate drive. With a maximum power dissipation of 300 W (Tc), this MOSFET is suitable for demanding industrial and automotive power management systems. Key electrical characteristics include an input capacitance (Ciss) of 4270 pF at 25 V and a gate charge (Qg) of 104 nC at 10 V. The STB60NF10-1 is housed in an I2PAK (TO-262-3 Long Leads) package, facilitating through-hole mounting. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 25 V |
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