STB60NE06L-16T4
MOSFET N-CH 60V 60A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB60NE06L-16T4 is an N-Channel Power MOSFET from the STripFET™ II series. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance is specified at 14mOhm maximum at 30A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 70 nC (max) at 4.5V Vgs and input capacitance (Ciss) of 4150 pF (max) at 25V Vds. Designed for surface mounting, it is provided in the TO-263-3, D2PAK package, supplied on tape and reel. This component is suitable for applications in the automotive and industrial sectors. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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