STB60N55F3
MOSFET N-CH 55V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB60N55F3 is an N-Channel STripFET™ III Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vds) of 55V and a continuous Drain Current (Id) of 80A at 25°C (Tc). With a low on-resistance of 8.5mOhm at 32A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 110W (Tc) and is housed in a surface-mount D2PAK package (TO-263-3, D2PAK). Key electrical characteristics include a Gate Charge (Qg) of 45 nC at 10V and an input capacitance (Ciss) of 2200 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in industrial power supplies, automotive applications, and power management systems.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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