STB5NK52ZD-1
MOSFET N-CH 520V 4.4A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB5NK52ZD-1 from the SuperMESH™ series is an N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 520V and a continuous drain current (Id) of 4.4A at 25°C. With a maximum Power Dissipation (Pd) of 70W, it is suitable for demanding power management tasks. The device exhibits a low Rds On of 1.5Ohm at 2.2A and 10V gate drive, coupled with a Gate Charge (Qg) of 16.9 nC at 10V. Its input capacitance (Ciss) is 529 pF at 25V. Packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting, this MOSFET operates within a temperature range of -55°C to 150°C. It finds application in power supplies, lighting, and industrial power control systems.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 520 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 529 pF @ 25 V |
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