STB5NK50ZT4
MOSFET N-CH 500V 4.4A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB5NK50ZT4 is a SuperMESH™ N-Channel Power MOSFET designed for demanding applications. This component features a 500V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 4.4A at 25°C (Tc), with a maximum power dissipation of 70W (Tc). The device offers a low Rds On of 1.5 Ohm maximum at 2.2A and 10V Vgs, facilitated by a 10V drive voltage. Key electrical characteristics include a gate charge (Qg) of 28 nC maximum at 10V and an input capacitance (Ciss) of 535 pF maximum at 25V. Mounted in a surface-mount D2PAK (TO-263-3, D2PAK) package, it operates across a temperature range of -55°C to 150°C. This part is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V |
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