STB5NK50Z-1
MOSFET N-CH 500V 4.4A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB5NK50Z-1 is a SuperMESH™ N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 4.4 A at 25°C (Tc). It offers a low on-resistance (Rds On) of 1.5 Ohm maximum at 2.2 A and 10 V gate drive. The device is rated for 70 W power dissipation at 25°C (Tc) and is housed in a TO-262 (I2PAK) through-hole package, suitable for efficient heat management. Key parameters include a gate charge (Qg) of 28 nC (Max) at 10 V and input capacitance (Ciss) of 535 pF (Max) at 25 V. This MOSFET is utilized in power supply, lighting, and industrial motor control sectors. The operating temperature range is -55°C to 150°C.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V |
Request a Quote
Clients Also Buy
STN1NK60Z
MOSFET N-CH 600V 300MA SOT223
STD3NK80ZT4
MOSFET N-CH 800V 2.5A DPAK
STF3NK80Z
MOSFET N-CH 800V 2.5A TO220FP
