STB5N62K3
MOSFET N-CH 620V 4.2A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB5N62K3 is a SuperMESH3™ N-Channel Power MOSFET designed for demanding applications. This device features a 620 V drain-source breakdown voltage and a continuous drain current capability of 4.2 A at 25°C (Tc). With a maximum power dissipation of 70 W (Tc), it is suitable for high-power switching applications. The on-resistance (Rds On) is specified at a maximum of 1.6 Ohm at 2.1 A and 10 V gate-source voltage.
Key parameters include a gate charge (Qg) of 26 nC (Max) at 10 V and input capacitance (Ciss) of 680 pF (Max) at 50 V. The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, facilitating efficient thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This component is commonly utilized in power supply units, industrial motor control, and lighting applications. The STB5N62K3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 50 V |
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