STB5N52K3
MOSFET N-CH 525V 4.4A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB5N52K3 is an N-Channel SuperMESH3™ Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 525V and a continuous Drain Current (Id) of 4.4A at 25°C (Tc), with a maximum power dissipation of 70W (Tc). The on-resistance (Rds On) is specified at 1.5 Ohms maximum at 2.2A and 10V gate drive. Key parameters include a gate charge (Qg) of 17 nC maximum and input capacitance (Ciss) of 545 pF maximum. The STB5N52K3 is packaged in a TO-263-3, D2PAK surface mount package and operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for use in power factor correction (PFC) circuits and switch mode power supplies (SMPS) across various industrial sectors.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
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