STB55NF03LT4
MOSFET N-CH 30V 55A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II series N-channel Power MOSFET, part number STB55NF03LT4. This device features a 30 V drain-source voltage (Vds) and a continuous drain current (Id) of 55A at 25°C (Tc), with a maximum power dissipation of 80W (Tc). The Rds(On) is specified at a maximum of 13mOhm at 27.5A and 10V Vgs. With a gate charge (Qg) of 27 nC at 4.5 V and input capacitance (Ciss) of 1265 pF at 25 V, this MOSFET is designed for efficient switching. It utilizes a surface mount D2PAK package (TO-263-3) and operates at junction temperatures up to 175°C. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1265 pF @ 25 V |
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