STB50NF25
MOSFET N-CH 250V 45A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB50NF25 is a high-performance N-Channel power MOSFET from the STripFET™ series. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 45A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 69mOhm maximum at 22A and 10V gate drive, with a maximum power dissipation of 160W (Tc). Designed for surface mount applications, it is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB and supplied on Tape & Reel (TR). Key parameters include a gate charge (Qg) of 68.2 nC at 10V and input capacitance (Ciss) of 2670 pF at 25V. The STB50NF25 is suitable for applications in power supply, motor control, and industrial automation. Operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V and threshold voltage (Vgs(th)) of 4V at 250µA.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 68.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2670 pF @ 25 V |
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