STB50NE10T4
MOSFET N-CH 100V 50A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB50NE10T4 is an N-Channel STripFET™ Power MOSFET designed for high-performance switching applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 50A at 25°C (Tc), supporting a maximum power dissipation of 180W (Tc). Its low on-resistance is specified at 27mOhm at 25A and 10V. The STB50NE10T4 utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 166 nC at 10V and input capacitance (Ciss) of 6000 pF at 25V. The operating temperature range is -65°C to 175°C (TJ). This component is commonly found in power supplies, automotive systems, and industrial automation. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 166 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
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