STB50N25M5
MOSFET N-CH 250V 28A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB55N25M5 is an N-channel Power MOSFET from the MDmesh™ V series, offering a 250V drain-source voltage rating. This device features a continuous drain current capability of 28A at 25°C and a maximum power dissipation of 110W at 25°C (Tc). With a low on-resistance of 65mOhm at 14A and 10V, and a gate charge of 44nC at 10V, it is optimized for efficiency. The input capacitance (Ciss) is rated at 1700pF at 50V. Packaged in a TO-263-3 (D2PAK) surface-mount configuration, this component is suitable for demanding applications across industries such as industrial power supplies, automotive electronics, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 50 V |
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