STB4NK60Z-1
MOSFET N-CH 600V 4A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH™ STB4NK60Z-1 is a 600V N-Channel Power MOSFET. This device offers a continuous drain current of 4A at 25°C (Tc) and a maximum power dissipation of 70W (Tc). Key electrical characteristics include a low Rds On of 2 Ohm maximum at 2A, 10V, and a gate charge (Qg) of 26 nC at 10V. The input capacitance (Ciss) is specified at 510 pF maximum at 25V. Designed for through-hole mounting, it is supplied in an I2PAK package (TO-262-3 Long Leads, I2PAK, TO-262AA). The operating junction temperature range is up to 150°C. This MOSFET is suitable for applications in power supply units and industrial automation.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
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