STB4N62K3
MOSFET N-CH 620V 3.8A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB4N62K3 is a SuperMESH3™ N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 620V and a continuous Drain Current (Id) of 3.8A at 25°C (Tc). Its low on-resistance, specified as 1.95 Ohm maximum at 1.9A and 10V Vgs, is critical for efficient power switching. The MOSFET offers a maximum power dissipation of 70W (Tc) and an operating junction temperature up to 150°C. Key parameters include a Gate Charge (Qg) of 14 nC maximum at 10V Vgs and an input capacitance (Ciss) of 450 pF maximum at 50V Vds. The STB4N62K3 is housed in a D2PAK surface mount package (TO-263-3, D2PAK) and is supplied on tape and reel. This component is commonly utilized in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 50 V |
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