STB45NF06T4
MOSFET N-CH 60V 38A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB45NF06T4 is an N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 38A at 25°C (Tc). With a maximum power dissipation of 80W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance (Rds On) of 28mOhm at 19A and 10V Vgs, contributing to reduced conduction losses. It is packaged in a TO-263-4, D2PAK surface-mount package, facilitating automated assembly. Key electrical characteristics include a gate charge (Qg) of 58 nC at 10V and input capacitance (Ciss) of 1730 pF at 25V. The STB45NF06T4 is engineered for use in automotive, industrial, and power supply sectors, leveraging its robust performance and thermal management capabilities.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 25 V |
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