STB45NF06
MOSFET N-CH 60V 38A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB45NF06, an N-Channel STripFET™ II Power MOSFET, features 60 V drain-source breakdown voltage and 38 A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 28 mOhm maximum at 19 A and 10 V gate drive voltage, with a maximum power dissipation of 80 W (Tc). Key parameters include a gate charge of 58 nC at 10 V and input capacitance of 980 pF at 25 V. The STB45NF06 is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding applications in automotive, industrial, and power supply sectors. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 980 pF @ 25 V |
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