STB40NS15T4
MOSFET N-CH 150V 40A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB40NS15T4 N-Channel Power MOSFET, part of the MESH OVERLAY™ series, offers robust performance with a 150V drain-source voltage and continuous drain current of 40A at 25°C (Tc). This device features a low on-resistance of 52 mOhm maximum at 20A and 10V drive voltage, with a maximum power dissipation of 300W (Tc). The STB40NS15T4 is housed in a TO-263-3, D2PAK surface mount package and is supplied on tape and reel. Key electrical parameters include a gate charge of 110 nC max at 10V and input capacitance of 2420 pF max at 25V. This component is suitable for applications in industrial power supplies, automotive systems, and power management solutions. It operates within a temperature range of -65°C to 175°C (TJ).
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2420 pF @ 25 V |
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