STB40NF10T4
MOSFET N-CH 100V 50A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB40NF10T4 is an N-Channel Power MOSFET from the STripFET™ II series. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 50A at 25°C (Tc). With a maximum on-resistance (Rds On) of 28mOhm at 25A and 10V, it offers efficient power handling, dissipating up to 150W (Tc). The device is housed in a TO-263-3, D2PAK package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 80 nC @ 10V and input capacitance (Ciss) of 1780 pF @ 25V. Operating across a temperature range of -50°C to 175°C (TJ), this MOSFET is utilized in applications such as power supplies, motor control, and automotive electronics. The device is supplied on tape and reel.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 25 V |
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