STB40N20
MOSFET N-CH 200V 40A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STB40N20 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 40A at 25°C (Tc), with a maximum power dissipation of 160W (Tc). The STB40N20 exhibits a low on-resistance of 45mOhm at 20A and 10V (Vgs), facilitated by its advanced MOSFET technology. Key parameters include a gate charge (Qg) of 75 nC at 10V and input capacitance (Ciss) of 2500 pF at 25V. Designed for surface mounting, it utilizes the TO-263-3, D2PAK package and operates within a temperature range of -55°C to 150°C (TJ). This component is suitable for use in automotive, industrial power supply, and renewable energy systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
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