STB3N62K3
MOSFET N-CH 620V 2.7A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB3N62K3 is an N-channel SuperMESH3™ MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 620V and a continuous Drain Current (Id) of 2.7A at 25°C (Tc), this component offers a maximum power dissipation of 45W. The device exhibits a low on-resistance (Rds On) of 2.5 Ohm at 1.4A and 10V, with a typical Gate Charge (Qg) of 13 nC at 10V and Input Capacitance (Ciss) of 385pF at 25V. The STB3N62K3 is housed in a TO-263-3, D2PAK package for surface mounting and operates at junction temperatures up to 150°C. This MOSFET is suitable for use in power supply units, industrial automation, and renewable energy systems.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 385 pF @ 25 V |
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