STB36NM60ND
MOSFET N-CH 600V 29A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB36NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This AEC-Q101 qualified device offers a continuous drain current of 29A at 25°C (Tc) and a maximum power dissipation of 190W (Tc). Key electrical characteristics include a Vgs(th) of 5V (max) at 250µA and a low Rds(on) of 110mOhm at 14.5A and 10V Vgs. The device features a gate charge (Qg) of 80.4 nC (max) at 10V and an input capacitance (Ciss) of 2785 pF (max) at 50V. Designed for surface mounting, it is supplied in a TO-263 (D2PAK) package, suitable for applications in the automotive industry. The maximum gate-source voltage is ±25V.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 80.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2785 pF @ 50 V |
| Qualification | AEC-Q101 |
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