STB36NM60N
MOSFET N-CH 600V 29A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB36NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 29 A at 25°C (Tc). With a maximum power dissipation of 210 W (Tc) and a low on-resistance (Rds On) of 105 mOhm at 14.5 A and 10 V, it is engineered for high-efficiency switching applications. The device is housed in a TO-263 (D2PAK) surface mount package, facilitating streamlined PCB assembly. Key parameters include a gate charge (Qg) of 83.6 nC at 10 V and input capacitance (Ciss) of 2722 pF at 100 V. Qualified to AEC-Q101 standards and designated with an Automotive grade, this MOSFET is suitable for demanding automotive power management systems, industrial power supplies, and high-voltage conversion circuits. The operating junction temperature (TJ) can reach up to 150°C.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 83.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2722 pF @ 100 V |
| Qualification | AEC-Q101 |
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