STB35NF10T4
MOSFET N-CH 100V 40A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II series N-Channel Power MOSFET, part number STB35NF10T4. This device features a Vdss of 100V and a continuous drain current (Id) of 40A at 25°C (Tc). With a low Rds(on) of 35mOhm maximum at 17.5A and 10V, this MOSFET is optimized for efficiency. Key parameters include a gate charge (Qg) of 55 nC maximum at 10V and input capacitance (Ciss) of 1550 pF maximum at 25V. The STB35NF10T4 offers a maximum power dissipation of 115W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). It is housed in a TO-263-3, D2PAK package, suitable for surface mounting and supplied on tape & reel. This component is widely utilized in power supply, motor control, and automotive applications.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 25 V |
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