STB30NM60ND
MOSFET N-CH 600V 25A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB30NM60ND is an N-channel Power MOSFET from the FDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain current (Id) of 25A at 25°C (Tc). With a maximum Power Dissipation of 190W (Tc) and a low Rds On of 130mOhm at 12.5A and 10V, this MOSFET is designed for efficient power switching. Key parameters include a Gate Charge (Qg) of 100 nC @ 10 V and an Input Capacitance (Ciss) of 2800 pF @ 50 V. The STB30NM60ND is supplied in a D2PAK surface mount package (TO-263-3, D2PAK) and is available on Tape & Reel. This device is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 50 V |