STB30NM60N
MOSFET N-CH 600V 25A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB30NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 25 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 130 mOhm at 12.5 A and 10 V gate drive. With a maximum power dissipation of 190 W (Tc), this MOSFET is suitable for high-efficiency switching applications. Key parameters include a gate charge (Qg) of 91 nC at 10 V and input capacitance (Ciss) of 2700 pF at 50 V. The STB30NM60N is offered in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, supplied on tape and reel. This component finds application in power factor correction, switch mode power supplies, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V |
Request a Quote
Clients Also Buy
STD13NM60N
MOSFET N-CH 600V 11A DPAK
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
STD8NM50N
MOSFET N-CH 500V 5A DPAK
