STB30NM50N
MOSFET N-CH 500V 27A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB30NM50N is an N-Channel Power MOSFET from the MDmesh™ II series, designed for high-efficiency switching applications. This device features a drain-source voltage (Vds) of 500V and a continuous drain current (Id) of 27A at 25°C (Tc), with a maximum power dissipation of 190W (Tc). The STB30NM50N offers a low on-resistance (Rds On) of 115mOhm at 13.5A and 10V, and a gate charge (Qg) of 94 nC at 10V. Its high transconductance and low input capacitance contribute to excellent switching characteristics. The component is housed in a surface-mount D2PAK package (TO-263-3, D2PAK) and operates at temperatures up to 150°C (TJ). This MOSFET is suitable for use in power supply units, lighting, and industrial applications requiring robust high-voltage switching.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2740 pF @ 50 V |