STB30N65M2AG
MOSFET N-CH 650V 20A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB30N65M2AG is a 650V N-Channel Power MOSFET in a TO-263 (D2PAK) surface mount package. This device offers a continuous drain current of 20A (Tc) at 25°C and a maximum power dissipation of 190W (Tc). Key electrical characteristics include a maximum Rds(on) of 180mOhm at 10A, 10V, and a gate charge (Qg) of 30.8 nC @ 10V. Input capacitance (Ciss) is rated at 1440 pF @ 100V. Designed for demanding applications, this MOSFET is qualified to AEC-Q101, making it suitable for automotive and industrial power control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1440 pF @ 100 V |
| Qualification | AEC-Q101 |
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