STB300NH02L
MOSFET N-CH 24V 120A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STB300NH02L is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a 24V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 120A at 25°C (Tc). With a low on-resistance (Rds On) of 1.8mOhm maximum at 80A and 10V Vgs, it minimizes conduction losses. The device features a 300W maximum power dissipation (Pd) at 25°C (Tc) and a wide operating temperature range from -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 109.4 nC maximum at 10V and input capacitance (Ciss) of 7055 pF maximum at 15V Vds. The STB300NH02L is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package, supplied on tape and reel. This MOSFET finds application in automotive, industrial power supply, and power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 109.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7055 pF @ 15 V |
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