STB2N62K3
MOSFET N-CH 620V 2.2A TO263Manufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB2N62K3 is an N-Channel SuperMESH3™ Power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 620V and a continuous drain current (Id) of 2.2A at 25°C (Tc). With a maximum power dissipation of 45W (Tc), it is suitable for demanding power conversion tasks. The on-resistance (Rds On) is specified as 3.6 Ohms maximum at 1.1A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 15 nC maximum at 10V and an input capacitance (Ciss) of 340 pF maximum at 50V. The STMicroelectronics STB2N62K3 is housed in a TO-263-3, D2PAK surface-mount package, ideal for automated assembly. This component finds application in industrial power supplies, lighting, and server power.
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 620 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 50 V |
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