STB28NM60ND
MOSFET N-CH 600V 23A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB28NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series. This device features a maximum continuous drain current of 23A (Tc) and a low on-resistance of 150mOhm at 11.5A, 10V. Designed for surface mounting, it is housed in a TO-263 (D2PAK) package. Key electrical parameters include a gate charge (Qg) of 62.5 nC @ 10 V and input capacitance (Ciss) of 2090 pF @ 100 V. The maximum power dissipation is 190W (Tc) with an operating junction temperature of 150°C. This component is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 62.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2090 pF @ 100 V |
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