STB27NM60ND
MOSFET N-CH 600V 21A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB27NM60ND is a 600V N-Channel Power MOSFET from the FDmesh™ II series, available in a TO-263 (D2PAK) surface mount package. This device offers a continuous drain current of 21A at 25°C (Tc) and a maximum power dissipation of 160W (Tc). Key electrical characteristics include a low on-resistance of 160mOhm at 10.5A and 10V, with a gate charge of 80 nC at 10V. Designed for demanding applications, it operates at junction temperatures up to 150°C and features AEC-Q101 qualification for automotive applications. The input capacitance (Ciss) is rated at 2400 pF at 50V. This component is widely utilized in automotive power management and industrial motor control systems.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 50 V |
| Qualification | AEC-Q101 |
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