STB26NM60ND
MOSFET N-CH 600V 21A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB26NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This component offers a 600V drain-source voltage (Vdss) and a continuous drain current of 21A (Tc) at 25°C, with a maximum power dissipation of 190W (Tc). Featuring a low on-resistance of 175mOhm (max) at 10.5A and 10V gate-source voltage, it utilizes advanced STripFET™ technology for enhanced performance.
The device is packaged in a TO-263-3, D2PAK surface-mount package, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 54.6 nC (max) at 10V and an input capacitance (Ciss) of 1817 pF (max) at 100V. Its operating temperature range extends to 150°C (TJ). This MOSFET is suitable for applications in power factor correction, switch mode power supplies, and lighting.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1817 pF @ 100 V |
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