STB26N60M2
MOSFET N-CHANNEL 600V 20A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB26N60M2 is a 600V N-Channel Power MOSFET from the MDmesh™ M2 series. This device features a low on-resistance of 165mOhm at 10A and 10V Vgs, with a continuous drain current capability of 20A at 25°C (Tc). The MOSFET is designed for efficient power switching applications, offering a maximum power dissipation of 169W (Tc). Key parameters include a gate charge of 34 nC at 10V and input capacitance of 1360 pF at 100V. The STB26N60M2 utilizes advanced MOSFET technology for high performance and reliability. It is offered in a surface mount D2PAK package (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) and is supplied on tape and reel. This component is suitable for use in power supplies, solar inverters, and other high-voltage power conversion systems.
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 169W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 100 V |
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