STB25NM60N-1
MOSFET N-CH 600V 21A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB25NM60N-1 is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 21 A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 160 mOhm at 10.5 A and 10 V, with a typical Gate Charge (Qg) of 84 nC at 10 V. Designed for efficient switching, it has an Input Capacitance (Ciss) of 2400 pF at 50 V. The STB25NM60N-1 is housed in an I2PAK (TO-262-3 Long Leads) package for through-hole mounting and supports a maximum power dissipation of 160 W (Tc). Its operational temperature range extends to 150°C (TJ). This component is utilized in power supply applications, industrial motor control, and lighting systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 50 V |
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