STB25NM60N
MOSFET N-CH 600V 21A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ II series STB25NM60N is a 600V N-Channel Power MOSFET in a TO-263-3, D2PAK package. This surface mount device offers a continuous drain current of 21A at 25°C (Tc) and a maximum power dissipation of 160W (Tc). Key electrical characteristics include a low on-resistance of 160mOhm maximum at 10.5A and 10V, and a gate charge of 84 nC maximum at 10V. Input capacitance (Ciss) is rated at 2400 pF maximum at 50V, with a gate-source threshold voltage of 4V maximum at 250µA. The maximum gate-source voltage is ±25V. This MOSFET is suitable for applications in power supplies, lighting, and industrial motor control. It is supplied on tape and reel.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 50 V |
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