STB25NM50N-1
MOSFET N-CH 500V 22A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB25NM50N-1 is a 500V N-Channel Power MOSFET from the MDmesh™ II series. This device features a continuous drain current of 22A (Tc) and a maximum power dissipation of 160W (Tc). With a low on-resistance of 140mOhm at 11A and 10V, it is designed for efficient power switching applications. The MOSFET has a gate charge of 84 nC at 10V and input capacitance (Ciss) of 2565 pF at 25V. The STB25NM50N-1 is housed in an I2PAK (TO-262-3 Long Leads) package for through-hole mounting and operates at junction temperatures up to 150°C. This component is suitable for use in power supplies, motor control, and renewable energy systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 25 V |
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