STB25NF06AG
MOSFET N-CH 60V 19A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STB25NF06AG, offers robust performance with a 60 V drain-source voltage and a continuous drain current of 19 A at 25°C (Tc). This AEC-Q101 qualified component is designed for demanding applications, featuring a low on-resistance characteristic suitable for efficient power switching. The STB25NF06AG is housed in a TO-263 (D2PAK) surface-mount package, facilitating high-density board layouts. With a maximum power dissipation of 50 W (Tc), it is well-suited for automotive and industrial power management systems. The device supports a gate-source voltage range for optimal Rds(on) performance.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | - |
| Drain to Source Voltage (Vdss) | 60 V |
| Qualification | AEC-Q101 |
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