STB24NM65N
MOSFET N-CH 650V 19A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB24NM65N, an MDmesh™ II series N-Channel Power MOSFET, offers a 650 V breakdown voltage and 19 A continuous drain current at 25°C (Tc). This surface mount device, in a D2PAK (TO-263-3) package, features a maximum Rds(on) of 190 mOhm at 9.5 A and 10 V Vgs. With a gate charge of 70 nC (max) and input capacitance of 2500 pF (max), it is suitable for high-efficiency switching applications. The device dissipates up to 160 W (Tc) and operates at junction temperatures up to 150°C. Its capabilities make it a component in power supply units, industrial motor drives, and solar inverters.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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